Photodiodes - Page 164
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Fully Depleted Photodiodes
Description: DIP, Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 200 pF
Responsivity/Photosensitivity:
0.08 to 0.58 A/W
Package Type:
DIP, Ceramic
Channels:
Multiple (16 Channels)
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Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Capacitance:
3400 to 5000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.9 µm
Description: InGaAs PIN photodiode from 0.9 to 1.9 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.9 µm
Operation Mode:
Photovoltaic
Dark Current:
100 to 1000 nA
Capacitance:
2000 to 3000 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
0.45 to 0.7 A/W
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Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
70 to 130 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
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Description: TO-Can Silicon photodiode from 190 to 1000 nm
Description: InGaAs PIN photodiode from 0.9 to 1.87 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.87 µm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Dark Current:
0.3 to 3 µA
Capacitance:
120 to 300 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
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Description: Ceramic Silicon photodiode from 190 to 1100 nm
2446 - 2460 of 2551 Photodiodes
Photodiode companies
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