Photodiodes - Page 163
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 100 pA
Capacitance:
0.5 to 0.75 pF
Responsivity/Photosensitivity:
0.2 to 0.25 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.65 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.04 to 0.2 nA
Capacitance:
250 to 800 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: Ceramic Silicon photodiode from 320 to 730 nm
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Responsivity/Photosensitivity:
0.6 to 0.7 A/W
Package Type:
Surface Mount
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Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2.5 nA
Responsivity/Photosensitivity:
0.15 to 1 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.87 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.87 µm
Operation Mode:
Photovoltaic
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: TO-Can Silicon photodiode from 320 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.87 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.87 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 100 nA
Capacitance:
1800 to 3000 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
more info
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Description: TO-Can Silicon photodiode from 190 to 1000 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
80 to 400 pA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
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Description: Silicon PIN photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.28 to 0.65 A/W
Package Type:
Surface Mount, Ceramic
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.87 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.87 µm
Operation Mode:
Photovoltaic
Capacitance:
900 to 2000 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: Ceramic Silicon PIN photodiode with dark current of 2 to 6 pA
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 10 nA
Capacitance:
200 to 400 pF
Responsivity/Photosensitivity:
0.54 A/W
Package Type:
Surface Mount, PCB
more info
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Description: TO-Can Silicon photodiode from 190 to 1100 nm
2431 - 2445 of 2551 Photodiodes
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