Photodiodes - Page 161
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Description: Silicon PIN photodiode from 380 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 1 nA
Responsivity/Photosensitivity:
0.41 to 0.46 A/W
Package Type:
Surface Mount, PCB
more info
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Description: APD Series 8-150 Silicon Avalanche Photodiodes, 800 nm band
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Through-Hole
more info
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Description: Silicon PIN photodiode from 190 to 1000 nm
Description: Back-Illuminated Silicon Photodiodes
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.16 to 10 nA
Responsivity/Photosensitivity:
0.30 to 0.59 A/W
Package Type:
Surface Mount, Chip
more info
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Description: Surface Mount Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 300 pA
Responsivity/Photosensitivity:
380 to 610 mA/W
Package Type:
Surface Mount
Channels:
Multiple (64 Channels))
more info
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Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Description: Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 300 pA
Capacitance:
70 to 100 pF
Responsivity/Photosensitivity:
0.1 to 0.54 A/W
Package Type:
Chip, Surface Mount
more info
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Description: APD Series 8-150 Silicon Avalanche Photodiodes, 800 nm band
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Through-Hole
more info
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Description: TO-Can Silicon photodiode from 320 to 1100 nm
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Description: DIP Silicon photodiode from 320 to 1000 nm
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.5 nA
Responsivity/Photosensitivity:
0.44 to 0.57 A/W
more info
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Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Description: Silicon PIN photodiode from 340 to 1100 nm
2401 - 2415 of 2551 Photodiodes
Photodiode companies
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