Photodiodes - Page 166
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Nd-YAG Optimized Photodiodes
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Responsivity/Photosensitivity:
0.6 to 0.72 A/W
Package Type:
Surface Mount, Flat-Pack
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Description: Ceramic Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
40 to 1000 pA
Capacitance:
230 to 350 pF
Responsivity/Photosensitivity:
0.38 to 0.61 A/W
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Description: Silicon PIN photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.33 to 0.58 A/W
Package Type:
Surface Mount, Ceramic
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Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Capacitance:
250 to 800 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Responsivity/Photosensitivity:
0.45 to 0.70 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.4 nA
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.21 to 2.1 µA
Capacitance:
110 to 300 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: TO-Can Silicon photodiode from 190 to 1000 nm
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Description: Silicon photodiode from 340 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 2.05 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.05 µm
Operation Mode:
Photovoltaic
Dark Current:
50 to 500 nA
Capacitance:
1700 to 3000 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 12.5 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: TO-Can Silicon photodiode from 190 to 1000 nm
Description: TO-Can Silicon photodiode from 190 to 1000 nm
2476 - 2490 of 2551 Photodiodes
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