Photodiodes - Page 162

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Large Active Area InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
200 to 450 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Back-Illuminated Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
920 nm
Operation Mode:
Photoconductive
Dark Current:
0.04 to 2 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.30 to 0.59 A/W
Package Type:
Surface Mount, Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 pA
Capacitance:
30 to 50 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
PCB
Configuration:
Array
Module:
No
more info
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
980 nm
Operation Mode:
Photoconductive
Capacitance:
1100 pF
Responsivity/Photosensitivity:
0.5 to 0.12 A/W
Package Type:
Through-Hole, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 75 nA
Capacitance:
1000 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
980 nm
Operation Mode:
Photoconductive
Capacitance:
380 pF
Responsivity/Photosensitivity:
0.5 to 0.12 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 pA
Capacitance:
20 to 40 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
Ceramic
Configuration:
Array
Module:
No
more info
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
720 nm
Operation Mode:
Photoconductive
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.12 to 0.36 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 pA
Capacitance:
65 pF
Responsivity/Photosensitivity:
0.1 to 0.5 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
980 nm
Operation Mode:
Photoconductive
Capacitance:
1100 pF
Responsivity/Photosensitivity:
0.5 to 0.12 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.4 nA
Capacitance:
1 to 1.5 pF
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
Package Type:
TO-Can Pigtail, Coaxial
Configuration:
Single
Module:
No
more info
Description: APD Series 8-150 Silicon Avalanche Photodiodes, 800 nm band
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
50 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Chip Silicon PIN photodiode with dark current of 20 to 200 nA
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
830 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 200 nA
Capacitance:
550 pF
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
720 nm
Operation Mode:
Photoconductive
Capacitance:
2500 pF
Responsivity/Photosensitivity:
0.12 to 0.36 A/W
Package Type:
Through-Hole, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.6 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.6 µm
Operation Mode:
Photovoltaic
Dark Current:
1 to 10 µA
Capacitance:
140 to 300 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
980 nm
Operation Mode:
Photoconductive
Capacitance:
65 pF
Responsivity/Photosensitivity:
0.5 to 0.12 A/W
Package Type:
Through-Hole, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
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