Photodiodes - Page 165
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Description: InGaAs PIN photodiode from 0.9 to 2.1 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.1 µm
Operation Mode:
Photovoltaic
Dark Current:
20 to 200 nA
Capacitance:
70 to 150 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.6 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.6 µm
Operation Mode:
Photovoltaic
Dark Current:
0.4 to 4 µA
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: TO-Can Silicon photodiode from 320 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 7.5 nA
Capacitance:
250 to 800 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 4 nA
Responsivity/Photosensitivity:
0.72 A/W
Package Type:
Surface Mount, Chip, Ceramic
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Description: Silicon PIN photodiode from 380 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 10 nA
Responsivity/Photosensitivity:
0.63 A/W
Package Type:
Surface Mount, Chip
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Description: InGaAs PIN photodiode from 1.3 to 1.55 µm
Description: InGaAs PIN photodiode from 0.9 to 2.1 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.1 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 100 nA
Responsivity/Photosensitivity:
1 to 1.2 A/W
more info
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Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
300 to 800 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
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Description: DIP, Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 200 pF
Responsivity/Photosensitivity:
0.39 to 0.58 A/W
Package Type:
DIP, Ceramic
Channels:
Multiple (16 Channels)
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Description: TO-Can Silicon photodiode from 190 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.85 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.85 µm
Operation Mode:
Photovoltaic
Capacitance:
1700 to 3000 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
250 to 1250 pA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic, DIP
Channels:
Multiple (32 Channels)
more info
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Description: TO-Can Silicon photodiode from 320 to 1100 nm
Description: TO-Can Silicon photodiode from 190 to 1100 nm
2461 - 2475 of 2551 Photodiodes
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