Photodiodes - Page 168

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
60 to 330 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
680 pF
Responsivity/Photosensitivity:
0.64 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Capacitance:
15 to 20 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Dark Current:
3 to 30 µA
Capacitance:
1500 to 3000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 100 pA
Capacitance:
0.8 to 1.2 pF
Responsivity/Photosensitivity:
0.2 to 0.25 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 380 to 780 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 780 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 500 pA
Capacitance:
1100 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
6 to 300 pA
Capacitance:
3200 pF
Responsivity/Photosensitivity:
0.1 to 0.36 A/W
Package Type:
Ceramic
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
2 pA
Capacitance:
35 pF
Responsivity/Photosensitivity:
0.34 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 340 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 10 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.22 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 700 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
40 to 80 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.085 to 0.85 µA
Capacitance:
40 to 100 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
160 pF
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
1600 pF
Responsivity/Photosensitivity:
0.38 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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