Photodiodes - Page 167
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Description: TO-Can Silicon photodiode from 190 to 1100 nm
Description: Silicon PIN photodiode from 360 to 1120 nm
Description: Silicon PIN photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.2 to 0.66 A/W
Package Type:
Surface Mount, Ceramic
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Description: Silicon PIN photodiode from 320 to 1060 nm
Description: InGaAs PIN photodiode from 0.9 to 1.85 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.85 µm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: Silicon PIN photodiode from 340 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.85 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.85 µm
Operation Mode:
Photovoltaic
Dark Current:
0.15 to 1.5 nA
Capacitance:
60 to 150 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: Silicon PIN photodiode from 760 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
760 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Responsivity/Photosensitivity:
0.25 to 0.56 A/W
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Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
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Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 100 pA
Responsivity/Photosensitivity:
0.25 to 0.42 A/W
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Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Responsivity/Photosensitivity:
0.72 A/W
Package Type:
Surface Mount, Chip, Ceramic
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Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.001 to 0.1 nA
Responsivity/Photosensitivity:
0.44 to 0.52 A/W
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Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
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Description: Ceramic Silicon photodiode from 340 to 1000 nm
2491 - 2505 of 2551 Photodiodes
Photodiode companies
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