Photodiodes - Page 170
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Description: Ceramic Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 1000 pA
Capacitance:
300 to 700 pF
Responsivity/Photosensitivity:
0.38 to 0.61 A/W
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Description: InGaAs PIN photodiode from 1.3 to 1.55 µm
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
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Description: DIP Silicon photodiode from 320 to 840 nm
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 4 nA
Responsivity/Photosensitivity:
0.72 A/W
Package Type:
Surface Mount, Chip, Ceramic
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Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Dark Current:
0.12 to 1.2 µA
Capacitance:
44 to 100 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: TO-Can Silicon photodiode from 190 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, Surface Mount
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
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Description: Silicon photodiode from 340 to 1100 nm
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1 nA
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Dark Current:
0.9 to 9 µA
Capacitance:
440 to 1000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.1 nA
Capacitance:
75 to 140 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1 nA
Responsivity/Photosensitivity:
0.72 A/W
Package Type:
Ceramic, Surface Mount, Chip
more info
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Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 500 pA
Responsivity/Photosensitivity:
0.1 to 0.5 A/W
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2536 - 2550 of 2551 Photodiodes
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