Photodiodes - Page 169
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
Surface Mount
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Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.33 to 1.67 nA
Capacitance:
1000 to 7000 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.5 nA
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
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Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Ceramic Silicon photodiode with dark current of 0.5 to 60 nA
Description: TO-Can Silicon photodiode from 252 to 256 nm
Description: InGaAs PIN photodiode from 1.3 to 1.55 µm
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.001 to 0.1 nA
Responsivity/Photosensitivity:
0.30 to 0.42 A/W
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
more info
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Description: Ceramic Silicon photodiode from 320 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 2.07 µm
Description: TO-Can Silicon photodiode from 190 to 1000 nm
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Description: Surface Mount Silicon photodiode from 380 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 50 pA
Responsivity/Photosensitivity:
640 mA/W
Package Type:
Surface Mount
more info
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Description: TO-Can Silicon photodiode from 320 to 1000 nm
2521 - 2535 of 2551 Photodiodes
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