Photodiodes - Page 160
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: InGaAs PIN photodiode from 0.9 to 1.65 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Capacitance:
1000 to 7000 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
2.1 to 21 µA
Capacitance:
1400 to 3000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: APD Series 8-150 Silicon Avalanche Photodiodes, 800 nm band
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Through-Hole
more info
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Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.65 to 6.5 µA
Capacitance:
400 to 1000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
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Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.9 to 10 nA
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
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Description: Back-Illuminated Silicon Photodiodes
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.05 nA
Responsivity/Photosensitivity:
0.30 to 0.59 A/W
Package Type:
Surface Mount, Chip
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Description: Silicon photodiode from 340 to 1100 nm
Description: APD Series 8-150 Silicon Avalanche Photodiodes, 800 nm band
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Through-Hole
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
more info
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Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: UV Enhanced Series Inversion Layer and Planar Diffused Silicon Photodiodes
2386 - 2400 of 2551 Photodiodes
Photodiode companies
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