Photodiodes - Page 155
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Fully Depleted Photodiodes
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
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Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: InGaAs PIN photodiode from 0.9 to 2.6 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.6 µm
Operation Mode:
Photovoltaic
Capacitance:
500 to 1000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: Photoconductive Devices
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
5 to 100 nA
Capacitance:
600 to 3200 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1.5 nA
Responsivity/Photosensitivity:
0.15 to 1 A/W
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Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Back Illuminated InGaAs Photodiode / Arrays
Description: Silicon PIN photodiode from 330 to 1040 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
330 to 1040 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Responsivity/Photosensitivity:
0.41 to 0.52 A/W
Package Type:
Surface Mount
more info
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Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Photovoltaic Devices
Description: DIP, Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
60 to 300 pA
Responsivity/Photosensitivity:
0.08 to 0.50 A/W
Package Type:
DIP, Ceramic
Channels:
Multiple (46 Channels)
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Description: Photoconductive Devices
Description: InGaAs PIN photodiode from 0.9 to 1.87 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.87 µm
Operation Mode:
Photovoltaic
Dark Current:
0.3 to 3 nA
Capacitance:
64 to 150 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
more info
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2311 - 2325 of 2551 Photodiodes
Photodiode companies
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