Photodiodes - Page 152

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Inversion Layer Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photoconductive
Capacitance:
4500 pF
Responsivity/Photosensitivity:
0.09 to 0.14 A/W
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
500 nA
Capacitance:
300 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
100 to 160 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Detector-Filter Combination Series Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photovoltaic
Capacitance:
100 pF
Responsivity/Photosensitivity:
0.025 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 760 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
760 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
16 pF
Responsivity/Photosensitivity:
0.52 to 0.68 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.8 nA
Capacitance:
0.8 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
380 pF
Responsivity/Photosensitivity:
0.33 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Blue Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
436 nm
Operation Mode:
Photovoltaic
Dark Current:
2 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
0.18 to 0.21 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 720 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
720 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.48 to 0.68 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Soft X-Ray, Far UV Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
1.2 to 1.6 nF
Package Type:
TO-Can
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1.3 to 1.55 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1.3 to 1.55 µm
Operation Mode:
Photovoltaic
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 2 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.07 to 1 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.44 to 0.64 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Inversion Layer Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photoconductive
Capacitance:
2500 pF
Responsivity/Photosensitivity:
0.09 to 0.14 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.85 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.85 µm
Operation Mode:
Photovoltaic
Dark Current:
0.5 to 5 nA
Capacitance:
195 to 500 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 50 nA
Capacitance:
75 to 600 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
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